Renesas Electronics Corporation Single FETs, MOSFETs TP65H150G4PS

The TP65H150G4PS is a 650V normally-off GaN FET in a TO-220 package with a source tab, designed for high-efficiency power conversion in applications such as consumer adapters and lighting. It features a maximum drain-source voltage of 800V, a typical on-resistance of 150mΩ at room temperature, a gate charge of 8nC, and zero reverse recovery charge. The device is JEDEC-qualified, RoHS compliant, and halogen-free, with a cascode structure integrating a silicon MOSFET for simplified driving and enhanced robustness. Its pinout is G-S-D, optimized for high-speed switching.