Renesas Electronics Corporation Single FETs, MOSFETs TP65H070G4PS

The TP65H070G4PS is a 650V normally-off GaN FET in a TO-220 package with a source tab, designed for high-efficiency power conversion in applications such as AI datacenter power supplies and E-mobility charging. It features a dynamic RDS(on)eff of 72mΩ at 25°C and 148mΩ at 150°C, a gate threshold voltage of 3.3V to 4.8V, and a total gate charge of 9nC. The device has a maximum continuous drain current of 29A at TC=25°C and a junction operating temperature range of -55°C to +150°C. It is JEDEC-qualified, RoHS compliant, and halogen-free, with negligible reverse recovery charge and compatibility with standard silicon gate drivers. Thermal resistance from junction to case is 1°C/W, and junction-to-ambient is 62°C/W.