Renesas Electronics Corporation Single FETs, MOSFETs TP65H050G4WS

The TP65H050G4WS is a 650V normally-off gallium nitride FET in a TO-247-3 package with a source tab, designed for high-efficiency power conversion in applications such as AI datacenter power supplies, e-mobility charging, and PV inverters. It features a dynamic RDS(on) of 60mΩ maximum at 25°C, a gate threshold voltage of 3.3V to 4.8V, and negligible reverse recovery charge. The device supports standard silicon drivers with a 4V threshold and operates with a junction temperature range of -55°C to 150°C. It has a junction-to-case thermal resistance of 1.05°C/W and is RoHS compliant and halogen-free. The part is JEDEC-qualified and meets the AEC-Q200 standard.