Silicon N Channel IGBT High speed power switching Product overview: RJP30H1DPD from Renesas Electronics Corporation is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-RJP30H1DPD can be used for catalog matching and distributor lookup.
Manufacturer: Renesas Electronics America
Win Source Part Number: 1243133-RJP30H1DPD
Manufacturer Homepage: www.renesas.com
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-RJP30H1DPD | 1243133-RJP30H1DPD |
| Product Name | N-Channel IGBT Transistor | IGBTs - Single - RJP30H1DPD |
| Package Type | SOT3 |
