Renesas Electronics Corporation Single FETs, MOSFETs RJL5012DPP-M0#T2

Description
N-Channel 500V 12A (Ta) 30W (Tc) Through Hole TO-220FL
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Description
N-Channel 500V 12A (Ta) 30W (Tc) Through Hole TO-220FL
Request a Quote Datasheet

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Single FETs, MOSFETs - RJL5012DPP-M0#T2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RJL5012DPP-M0#T2-ND
Single FETs, MOSFETs RJL5012DPP-M0#T2-ND
N-Channel 500V 12A (Ta) 30W (Tc) Through Hole TO-220FL

N-Channel 500V 12A (Ta) 30W (Tc) Through Hole TO-220FL

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJL5012DPP-M0#T2 - 1092324-RJL5012DPP-M0#T2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJL5012DPP-M0#T2
1092324-RJL5012DPP-M0#T2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJL5012DPP-M0#T2 1092324-RJL5012DPP-M0#T2
Manufacturer: Renesas Electronics America Win Source Part Number: 1092324-RJL5012DPP-M 0#T2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FL Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 12A (Ta) Max Gate Charge: 27.8nC @ 10V Max Input Capacitance: 1050pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 700 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 1092324-RJL5012DPP-M0#T2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FL
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 12A (Ta)
Max Gate Charge: 27.8nC @ 10V
Max Input Capacitance: 1050pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 700 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RJL5012DPP-M0#T2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RJL5012DPP-M0#T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RJL5012DPP-M0#T2
MOSFET N-CH 500V 12A TO220FL

MOSFET N-CH 500V 12A TO220FL

Supplier's Site
MOSFET MOSFET

MOSFET MOSFET

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number RJL5012DPP-M0#T2-ND 1092324-RJL5012DPP-M0#T2 RJL5012DPP-M0#T2 RJL5012DPP-M0#T2
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJL5012DPP-M0#T2 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220FL TO-220; TO-220-3 Full Pack
V(BR)DSS 500 volts
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