Manufacturer: Renesas Electronics America
Win Source Part Number: 1092322-RJK6032DPH-E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40.3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-251
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 3A (Ta)
Max Gate Charge: 9nC @ 10V
Max Input Capacitance: 285pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.3 Ohm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
N-Channel 600V 3A (Ta) 40.3W (Tc) Through Hole TO-251
MOSFET N-CH 600V 3A TO251
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1092322-RJK6032DPH-E0#T2 | RJK6032DPH-E0#T2-ND | RJK6032DPH-E0#T2 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK6032DPH-E0#T2 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 600 volts | ||
| PD | 40300 milliwatts |
