MOSFET N-CH 600V 3A TO251 Product overview: RJK6032DPH-E0#T2 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RJK6032DPH-E0#T2
N-Channel 600V 3A (Ta) 40.3W (Tc) Through Hole TO-251
Manufacturer: Renesas Electronics America
Win Source Part Number: 1092322-RJK6032DPH-E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40.3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-251
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 3A (Ta)
Max Gate Charge: 9nC @ 10V
Max Input Capacitance: 285pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.3 Ohm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
MOSFET N-CH 600V 3A TO251
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-RJK6032DPH-E0#T2 | RJK6032DPH-E0#T2-ND | 1092322-RJK6032DPH-E0#T2 | RJK6032DPH-E0#T2 |
| Product Name | 600V 3A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK6032DPH-E0#T2 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 40300 milliwatts | 40300 milliwatts | ||
| TJ | 150 C (302 F) | 150 C (302 F) | ||
| Package Type | Tape & Reel (TR) | TO-251-3 Short Leads, IPAK, TO-251AA | SOT3; TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
