Renesas Electronics Corporation Single FETs, MOSFETs RJK5035DPP-A0#T2

N-channel MOSFET in TO-220FP package designed for high-speed power switching, with a drain-to-source voltage rating of 500 V and a continuous drain current of 10 A. It has a typical on-resistance of 0.715 Ω at 5 A and 10 V gate-source voltage. The device features a channel-to-case thermal impedance of 4.23 °C/W and a maximum channel temperature of 150 °C. The TO-220FP package measures 10.16 mm between leads, with a body length of 15.38 mm and mass of 1.9 g. Avalanche energy is rated at 3.56 mJ under specified conditions.