Renesas Electronics Corporation Single FETs, MOSFETs RJK5003DPD-00#J2

RJK5003DPD is a silicon N-channel power MOSFET designed for high-speed switching applications such as lighting ballasts and SMPS. It features a drain-to-source voltage rating of 500 V, a continuous drain current of 5 A, and a maximum on-state resistance of 1.5 Ω at 2 A and 10 V gate-source voltage. The device is packaged in an MP-3A surface-mount case with a mass of 0.32 g and operates with a maximum channel temperature of 150 °C. Thermal impedance from channel to case is 2.0 °C/W. The part meets RoHS requirements and is rated for storage temperatures from -55 °C to +150 °C.