Renesas Electronics Corporation Single FETs, MOSFETs RJK4514DPK-00#T0

Description
N-Channel 450V 22A (Ta) 150W (Tc) Through Hole TO-3P
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Description
N-Channel 450V 22A (Ta) 150W (Tc) Through Hole TO-3P
Request a Quote Datasheet

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Single FETs, MOSFETs - RJK4514DPK-00#T0-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RJK4514DPK-00#T0-ND
Single FETs, MOSFETs RJK4514DPK-00#T0-ND
N-Channel 450V 22A (Ta) 150W (Tc) Through Hole TO-3P

N-Channel 450V 22A (Ta) 150W (Tc) Through Hole TO-3P

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 998277-RJK4514DPK-00#T0 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
998277-RJK4514DPK-00#T0
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 998277-RJK4514DPK-00#T0
Win Source Part Number: 998277-RJK4514DPK-00 #T0 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 1 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 450 V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 11A, 10V Power Dissipation (Max): 150W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-3P Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 79 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: Renesas Electronics America Inc Base Product Number: RJK4514 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 998277-RJK4514DPK-00#T0
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 450 V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-3P
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: Renesas Electronics America Inc
Base Product Number: RJK4514
Drive Voltage (Max Rds On, Min Rds On): 10V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RJK4514DPK-00#T0 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RJK4514DPK-00#T0
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RJK4514DPK-00#T0
MOSFET N-CH 450V 22A TO3P

MOSFET N-CH 450V 22A TO3P

Supplier's Site
MOSFET MOSFET

MOSFET MOSFET

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number RJK4514DPK-00#T0-ND 998277-RJK4514DPK-00#T0 RJK4514DPK-00#T0 RJK4514DPK-00#T0
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
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