Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single RJK0454DPB-WS#J5

The RJK0454DPB is a silicon N-channel power MOSFET designed for power switching applications, featuring a 40V drain-to-source voltage rating and a maximum drain current of 40A. It has a typical on-resistance of 3.9 mΩ at 10V gate-source voltage and is packaged in an LFPAK (SC-100) format with dimensions of 5.3 mm × 4.9 mm. The device supports peak drain current up to 160A under pulse conditions, has a total gate charge of 25 nC, and dissipates up to 55W with a thermal resistance of 2.27 °C/W. It is lead-free and halogen-free, with a channel temperature limit of 150 °C and storage temperature range of -55 to +150 °C.