Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - IGBTs - Single RJH65T04BDPM-A0#T2

Win Source Part Number: 1165684-RJH65T04BDPM-A0#T2
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Package: Tube
Standard Package: 25
Power - Max: 65 W
Reverse Recovery Time (trr): 80 ns
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 30A
Switching Energy: 360µJ (on), 350µJ (off)
Input Type: Standard
Gate Charge: 74 nC
Td (on/off) @ 25°C: 35ns/125ns
Test Condition: 400V, 30A, 10Ohm, 15V
Mounting Type: Through Hole
Package / Case: SC-94
Supplier Device Package: TO-3PFP
Temperature Range - Operating: 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Renesas Electronics America Inc
Other Names: 559-RJH65T04BDPM-A0#T2,-1161-RJH65T04BDPM-A0#T2

ABU / IGBT Product overview: RJH65T04BDPM-A0#T2 from Renesas Electronics Corporation is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-RJH65T04BDPM-A0#T2 can be used for catalog matching and distributor lookup.

IGBT Trench 650V 60A 65W Through Hole TO-3PFP