The RJH60M6DPQ-E0 is a 600 V, 40 A IGBT with a built-in fast recovery diode, packaged in a TO-247 case measuring 33.0 × 15.94 × 5.45 mm and weighing 6.0 g. It features a collector-to-emitter saturation voltage of 1.8 V at 40 A and 15 V gate-emitter voltage, a short-circuit withstand time of 8 μs at 100 °C, and total switching energy of 2.10 mJ under inductive load. The device supports a maximum junction temperature of 150 °C and meets RoHS standards.
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The RJH60M6DPQ-E0 is a 600 V, 40 A IGBT with a built-in fast recovery diode, packaged in a TO-247 case measuring 33.0 × 15.94 × 5.45 mm and weighing 6.0 g. It features a collector-to-emitter saturation voltage of 1.8 V at 40 A and 15 V gate-emitter voltage, a short-circuit withstand time of 8 μs at 100 °C, and total switching energy of 2.10 mJ under inductive load. The device supports a maximum junction temperature of 150 °C and meets RoHS standards.
