Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - IGBTs - Single RJH60M3DPP-M0#T2

Win Source Part Number: 1007902-RJH60M3DPP-M0#T2
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Package: Tube
Standard Package: 1
Power - Max: 39.7 W
Reverse Recovery Time (trr): 90 ns
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 35 A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 17A
Switching Energy: 290µJ (on), 290µJ (off)
Input Type: Standard
Gate Charge: 60 nC
Td (on/off) @ 25°C: 38ns/90ns
Test Condition: 300V, 17A, 5Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FL
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: Renesas Electronics America Inc
Other Names: RJH60M3DPPM0T2
Base Product Number: RJH60M3

IGBT Trench 600V 35A 39.7W Through Hole TO-220FL

IGBT 600V 35A 39.7W TO-220FL Product overview: RJH60M3DPP-M0#T2 from Renesas Electronics Corporation is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 35A, 39.7W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 35A, 39.7W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-RJH60M3DPP-M0#T2 can be used for catalog matching and distributor lookup.