Renesas Electronics Corporation 600V 80A 260.4W IGBT Transistor RJH60F5DPQ

Description
IGBT 600V 80A 260.4W TO247A Product overview: RJH60F5DPQ from Renesas Electronics Corporation is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 80A, 260.4W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 80A, 260.4W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-RJH60F5DPQ can be used for catalog matching and distributor lookup.
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Description
IGBT 600V 80A 260.4W TO247A Product overview: RJH60F5DPQ from Renesas Electronics Corporation is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 80A, 260.4W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 80A, 260.4W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-RJH60F5DPQ can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
600V 80A 260.4W IGBT Transistor
279-RJH60F5DPQ
600V 80A 260.4W IGBT Transistor 279-RJH60F5DPQ
IGBT 600V 80A 260.4W TO247A Product overview: RJH60F5DPQ from Renesas Electronics Corporation is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 80A, 260.4W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 80A, 260.4W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-RJH60F5DPQ can be used for catalog matching and distributor lookup.

IGBT 600V 80A 260.4W TO247A Product overview: RJH60F5DPQ from Renesas Electronics Corporation is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 80A, 260.4W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 80A, 260.4W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-RJH60F5DPQ can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - Single - RJH60F5DPQ - 295116-RJH60F5DPQ - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - RJH60F5DPQ
295116-RJH60F5DPQ
IGBTs - Single - RJH60F5DPQ 295116-RJH60F5DPQ
Manufacturer: Renesas Electronics America Win Source Part Number: 295116-RJH60F5DPQ Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 90ns IGBT Type: Trench Input Type: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247A Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 260.4W Collector-emitter saturation voltage(Max): 1.8V @ 15V, 40A Turn-on and Turn-off delay time: 53ns/105ns Testing Conditions: 400V, 30A, 5 Ohm, 15V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 295116-RJH60F5DPQ
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 90ns
IGBT Type: Trench
Input Type: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247A
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 260.4W
Collector-emitter saturation voltage(Max): 1.8V @ 15V, 40A
Turn-on and Turn-off delay time: 53ns/105ns
Testing Conditions: 400V, 30A, 5 Ohm, 15V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 279-RJH60F5DPQ 295116-RJH60F5DPQ
Product Name 600V 80A 260.4W IGBT Transistor IGBTs - Single - RJH60F5DPQ
PD 260400 milliwatts 260400 milliwatts
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