Renesas Electronics Corporation IGBTs - Single - RJH60F5DPQ RJH60F5DPQ

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 295116-RJH60F5DPQ Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 90ns IGBT Type: Trench Input Type: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247A Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 260.4W Collector-emitter saturation voltage(Max): 1.8V @ 15V, 40A Turn-on and Turn-off delay time: 53ns/105ns Testing Conditions: 400V, 30A, 5 Ohm, 15V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Renesas Electronics America Win Source Part Number: 295116-RJH60F5DPQ Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 90ns IGBT Type: Trench Input Type: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247A Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 260.4W Collector-emitter saturation voltage(Max): 1.8V @ 15V, 40A Turn-on and Turn-off delay time: 53ns/105ns Testing Conditions: 400V, 30A, 5 Ohm, 15V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - RJH60F5DPQ - 295116-RJH60F5DPQ - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - RJH60F5DPQ
295116-RJH60F5DPQ
IGBTs - Single - RJH60F5DPQ 295116-RJH60F5DPQ
Manufacturer: Renesas Electronics America Win Source Part Number: 295116-RJH60F5DPQ Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 90ns IGBT Type: Trench Input Type: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247A Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 260.4W Collector-emitter saturation voltage(Max): 1.8V @ 15V, 40A Turn-on and Turn-off delay time: 53ns/105ns Testing Conditions: 400V, 30A, 5 Ohm, 15V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 295116-RJH60F5DPQ
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 90ns
IGBT Type: Trench
Input Type: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247A
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 260.4W
Collector-emitter saturation voltage(Max): 1.8V @ 15V, 40A
Turn-on and Turn-off delay time: 53ns/105ns
Testing Conditions: 400V, 30A, 5 Ohm, 15V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 295116-RJH60F5DPQ
Product Name IGBTs - Single - RJH60F5DPQ
VCE(on) 1.8 volts
Unlock Full Specs
to access all available technical data