Manufacturer: Renesas Electronics America
Win Source Part Number: 1092262-RJH60F4DPK-0
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 140ns
IGBT Type: Trench
Input Type: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-3P
Maximum Current Collector: 60A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 235.8W
Collector-emitter saturation voltage(Max): 1.82V @ 15V, 30A
Turn-on and Turn-off delay time: 45ns/85ns
Testing Conditions: 400V, 30A, 5 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
IGBT Trench 600V 60A 235.8W Through Hole TO-3P
IGBT 600V 60A 235.8W TO-3P
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1092262-RJH60F4DPK-00#T0 | RJH60F4DPK-00#T0-ND | RJH60F4DPK-00#T0 | RJH60F4DPK-00#T0 |
| Product Name | IGBTs - Single - RJH60F4DPK-00#T0 | Single IGBTs | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| VCE(on) | 1.82 volts | |||
| PD | 235800 milliwatts | |||
| TJ | 150 C (302 F) | 150 C (302 F) |
