IGBT 600V 50A 201.6W TO-247A Product overview: RJH60F0DPQ-A0#T0 from Renesas Electronics Corporation is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 50A, 201.6W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 50A, 201.6W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-RJH60F0DPQ-A0#T0
IGBT Trench 600V 50A 201.6W Through Hole TO-247A
Manufacturer: Renesas Electronics America
Win Source Part Number: 891747-RJH60F0DPQ-A0
Operating Temperature Range: 150°C (TJ)
Features: IGBT Trench 600 V 50 A 201.6 W Through Hole TO-247A
Package: Tube
Package: TO-247-3
Mounting: Through Hole
Family Name: RJH60F0
Categories: Discrete Semiconductor Products
Case / Package: TO-247A
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Quantity per package: 1
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
IGBT Single Transistor, 50 A, 1.7 V, 201.6 W, 600 V, TO-247, 3 RoHS Compliant: Yes
IGBT 600V 50A 201.6W TO-247A
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-RJH60F0DPQ-A0#T0 | RJH60F0DPQ-A0#T0-ND | 891747-RJH60F0DPQ-A0#T0 | 61X9884 | RJH60F0DPQ-A0#T0 |
| Product Name | 600V 50A 201.6W IGBT Transistor | Single IGBTs | IGBTs - Single - RJH60F0DPQ-A0#T0 | Igbt Single Transistor, 50 A, 1.7 V, 201.6 W, 600 V, To-247, 3 Rohs Compliant Renesas | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |