Renesas Electronics Corporation IGBTs - Single - RJH60D7BDPQ-E0#T2 RJH60D7BDPQ-E0#T2

Manufacturer: Renesas Electronics America
Win Source Part Number: 135144-RJH60D7BDPQ-E0#T2
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 25ns
IGBT Type: Trench
Input Type: Standard
Gate Charge: 125nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 90A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 300W
Collector-emitter saturation voltage(Max): 2.2V @ 15V, 50A
Total Switching Energy(Ets): 700μJ (on), 1.4mJ (off)
Turn-on and Turn-off delay time: 60ns/180ns
Testing Conditions: 300V, 50A, 5 Ohm, 15V
Alternative Parts (Cross-Reference): APT54GA60BD30; RJH60D7DPM-00-T1; RJH60D6DPM-00-T1;
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited

IGBT Trench 600V 90A 300W Through Hole TO-247

IGBT 600V 90A 300W TO-247 Product overview: RJH60D7BDPQ-E0#T2 from Renesas Electronics Corporation is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 90A, 300W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 90A, 300W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-RJH60D7BDPQ-E0#T2 can be used for catalog matching and distributor lookup.