Renesas Electronics Corporation IGBTs - Single - RJH60D6DPK RJH60D6DPK

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 210768-RJH60D6DPK Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 100ns IGBT Type: Trench Input Type: Standard Gate Charge: 104nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3P Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 260W Collector-emitter saturation voltage(Max): 2.2V @ 15V, 40A Total Switching Energy(Ets): 850μJ (on), 600μJ (off) Turn-on and Turn-off delay time: 50ns/160ns Testing Conditions: 300V, 40A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 210768-RJH60D6DPK Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 100ns IGBT Type: Trench Input Type: Standard Gate Charge: 104nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3P Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 260W Collector-emitter saturation voltage(Max): 2.2V @ 15V, 40A Total Switching Energy(Ets): 850μJ (on), 600μJ (off) Turn-on and Turn-off delay time: 50ns/160ns Testing Conditions: 300V, 40A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
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IGBTs - Single - RJH60D6DPK - 210768-RJH60D6DPK - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - RJH60D6DPK
210768-RJH60D6DPK
IGBTs - Single - RJH60D6DPK 210768-RJH60D6DPK
Manufacturer: Renesas Electronics America Win Source Part Number: 210768-RJH60D6DPK Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 100ns IGBT Type: Trench Input Type: Standard Gate Charge: 104nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3P Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 260W Collector-emitter saturation voltage(Max): 2.2V @ 15V, 40A Total Switching Energy(Ets): 850μJ (on), 600μJ (off) Turn-on and Turn-off delay time: 50ns/160ns Testing Conditions: 300V, 40A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 210768-RJH60D6DPK
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 100ns
IGBT Type: Trench
Input Type: Standard
Gate Charge: 104nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-3P
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 260W
Collector-emitter saturation voltage(Max): 2.2V @ 15V, 40A
Total Switching Energy(Ets): 850μJ (on), 600μJ (off)
Turn-on and Turn-off delay time: 50ns/160ns
Testing Conditions: 300V, 40A, 5 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
600V 80A 260W IGBT Transistor
279-RJH60D6DPK
600V 80A 260W IGBT Transistor 279-RJH60D6DPK
IGBT 600V 80A 260W TO3P Product overview: RJH60D6DPK from Renesas Electronics Corporation is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 80A, 260W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 80A, 260W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-RJH60D6DPK can be used for catalog matching and distributor lookup.

IGBT 600V 80A 260W TO3P Product overview: RJH60D6DPK from Renesas Electronics Corporation is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 80A, 260W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 80A, 260W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-RJH60D6DPK can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 210768-RJH60D6DPK 279-RJH60D6DPK
Product Name IGBTs - Single - RJH60D6DPK 600V 80A 260W IGBT Transistor
VCE(on) 2.2 volts
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