Renesas Electronics Corporation Single IGBTs RJH60D5BDPQ-E0#T2

IGBT Trench 600V 75A 200W Through Hole TO-247

Manufacturer: Renesas Electronics America
Win Source Part Number: 793206-RJH60D5BDPQ-E0#T2
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-247-3
Power - Max: 200W
Reverse Recovery Time (trr): 25ns
IGBT Type: Trench
Switching Energy: 400μJ (on), 810μJ (off)
Input Type: Standard
Gate Charge: 78nC
Td (on/off) @ 25°C: 50ns/130ns
Test Condition: 300V, 37A, 5 Ohm, 15V
Family Name: RJH60D5BDPQ-E0
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-247
Current - Collector (Ic) (Maximum): 75A
Voltage - Collector Emitter Breakdown (Maximum): 600V
Vce(on) (Maximum) @ Vge, Ic: 2.2V @ 15V, 37A
Alternative Parts (Cross-Reference): RGCL80TS60C11; RGCL80TS60DC11; APT36GA60BD15; APT30GT60BRDLG;
Introduction Date: July 09, 2012
ECCN: EAR99
Estimated EOL Date: 2022
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

IGBT 600V 75A 200W TO-247 Product overview: RJH60D5BDPQ-E0#T2 from Renesas Electronics Corporation is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 75A, 200W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 75A, 200W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-RJH60D5BDPQ-E0#T2 can be used for catalog matching and distributor lookup.