Renesas Electronics Corporation IGBTs - Single - RJH60D1DPP-M0#T2 RJH60D1DPP-M0#T2

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 062525-RJH60D1DPP-M0 #T2 Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 70ns IGBT Type: Trench Input Type: Standard Gate Charge: 13nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FL Maximum Current Collector: 20A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 30W Collector-emitter saturation voltage(Max): 2.5V @ 15V, 10A Total Switching Energy(Ets): 100μJ (on), 130μJ (off) Turn-on and Turn-off delay time: 30ns/42ns Testing Conditions: 300V, 10A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 062525-RJH60D1DPP-M0 #T2 Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 70ns IGBT Type: Trench Input Type: Standard Gate Charge: 13nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FL Maximum Current Collector: 20A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 30W Collector-emitter saturation voltage(Max): 2.5V @ 15V, 10A Total Switching Energy(Ets): 100μJ (on), 130μJ (off) Turn-on and Turn-off delay time: 30ns/42ns Testing Conditions: 300V, 10A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - RJH60D1DPP-M0#T2 - 062525-RJH60D1DPP-M0#T2 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - RJH60D1DPP-M0#T2
062525-RJH60D1DPP-M0#T2
IGBTs - Single - RJH60D1DPP-M0#T2 062525-RJH60D1DPP-M0#T2
Manufacturer: Renesas Electronics America Win Source Part Number: 062525-RJH60D1DPP-M0 #T2 Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 70ns IGBT Type: Trench Input Type: Standard Gate Charge: 13nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FL Maximum Current Collector: 20A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 30W Collector-emitter saturation voltage(Max): 2.5V @ 15V, 10A Total Switching Energy(Ets): 100μJ (on), 130μJ (off) Turn-on and Turn-off delay time: 30ns/42ns Testing Conditions: 300V, 10A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited

Manufacturer: Renesas Electronics America
Win Source Part Number: 062525-RJH60D1DPP-M0#T2
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 70ns
IGBT Type: Trench
Input Type: Standard
Gate Charge: 13nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FL
Maximum Current Collector: 20A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 30W
Collector-emitter saturation voltage(Max): 2.5V @ 15V, 10A
Total Switching Energy(Ets): 100μJ (on), 130μJ (off)
Turn-on and Turn-off delay time: 30ns/42ns
Testing Conditions: 300V, 10A, 5 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore, Singapore
600V 20A 20.8W IGBT Transistor
279-RJH60D1DPP-M0#T2
600V 20A 20.8W IGBT Transistor 279-RJH60D1DPP-M0#T2
IGBT 600V 20A 20.8W TO220FL Product overview: RJH60D1DPP-M0#T2 from Renesas Electronics Corporation is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20A, 20.8W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 20A, 20.8W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-RJH60D1DPP-M0#T2 can be used for catalog matching and distributor lookup.

IGBT 600V 20A 20.8W TO220FL Product overview: RJH60D1DPP-M0#T2 from Renesas Electronics Corporation is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20A, 20.8W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 20A, 20.8W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-RJH60D1DPP-M0#T2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single IGBTs - RJH60D1DPP-M0#T2-ND - DigiKey
Thief River Falls, MN, United States
IGBT Trench 600V 20A 30W Through Hole TO-220FL

IGBT Trench 600V 20A 30W Through Hole TO-220FL

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - RJH60D1DPP-M0#T2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
RJH60D1DPP-M0#T2
Discrete Semiconductor Products - Transistors - IGBTs RJH60D1DPP-M0#T2
IGBT 600V 20A 20.8W TO220FL

IGBT 600V 20A 20.8W TO220FL

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 062525-RJH60D1DPP-M0#T2 279-RJH60D1DPP-M0#T2 RJH60D1DPP-M0#T2-ND RJH60D1DPP-M0#T2
Product Name IGBTs - Single - RJH60D1DPP-M0#T2 600V 20A 20.8W IGBT Transistor Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 2.5 volts
PD 30000 milliwatts
TJ 150 C (302 F) 150 C (302 F) 150 C (302 F)
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