The RJH1CV6DPQ-E0 is an IGBT transistor with a built-in fast recovery diode, designed for inverter applications. It is packaged in a TO-247 case with dimensions of 91.02 mm in length, 33.0 mm in width, and 5.45 mm in height, weighing 6.0 g. The device has a 1200 V collector-to-emitter voltage rating and can handle a continuous collector current of 30 A at a case temperature of 100°C. It features a low collector-to-emitter saturation voltage of 1.8 V at 30 A and 15 V gate-emitter voltage, and a short circuit withstand time of 5 μs. The junction-to-case thermal resistance is 0.43 °C/W for the IGBT and 0.69 °C/W for the diode. The device is rated for a maximum junction temperature of 150 °C and operates within a storage temperature range of -55 to +150 °C.
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The RJH1CV6DPQ-E0 is an IGBT transistor with a built-in fast recovery diode, designed for inverter applications. It is packaged in a TO-247 case with dimensions of 91.02 mm in length, 33.0 mm in width, and 5.45 mm in height, weighing 6.0 g. The device has a 1200 V collector-to-emitter voltage rating and can handle a continuous collector current of 30 A at a case temperature of 100°C. It features a low collector-to-emitter saturation voltage of 1.8 V at 30 A and 15 V gate-emitter voltage, and a short circuit withstand time of 5 μs. The junction-to-case thermal resistance is 0.43 °C/W for the IGBT and 0.69 °C/W for the diode. The device is rated for a maximum junction temperature of 150 °C and operates within a storage temperature range of -55 to +150 °C.
