The RJH1CV5DPQ-E0 is a 1200 V, 25 A IGBT with a built-in fast recovery diode, housed in a TO-247 package measuring 33.0 × 51.6 × 15.94 mm and weighing 6.0 g. It features a collector-emitter saturation voltage of 1.8 V at 25 A and 15 V gate-emitter voltage, a short-circuit withstand time of 5 μs, and a turn-off energy of 1.5 mJ under inductive load conditions. The device meets AEC-Q200 qualifications and is rated for a maximum junction temperature of 150 °C. Thermal resistance is 0.51 °C/W for the IGBT and 0.69 °C/W for the diode. The part is RoHS compliant and designed for inverter applications.
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RJH1CV5DPQ-E0#T2 |
| Product Name | IGBT Transistors |
