The RJH1CM6DPQ-E0 is an IGBT transistor in a TO-247 package designed for inverter applications. It features a 1200 V collector-emitter voltage rating and a continuous collector current of 20 A at 100°C case temperature. The device has a typical collector-emitter saturation voltage of 2.1 V at 20 A and 15 V gate-emitter voltage, with a built-in fast recovery diode exhibiting a reverse recovery time of 200 ns. It supports a peak collector current of 60 A for pulses less than 10 μs and includes short-circuit withstand capability of 10 μs. The junction-to-case thermal resistance is 0.43 °C/W for the IGBT and 0.69 °C/W for the diode, with a maximum junction temperature of 150 °C. The part meets RoHS standards and is packaged in a TO-247 case measuring 33.0 mm × 5.45 mm × 91.02 mm with a mass of 6.0 g.
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RJH1CM6DPQ-E0#T2 |
| Product Name | IGBT Transistors |
