Renesas Electronics Corporation Memory R1WV6416RSD-5SI#B0

Description
SRAM Memory IC 64Mb (8M x 8, 4M x 16) Parallel 55ns 52-TSOP II
Request a Quote Datasheet
Description
SRAM Memory IC 64Mb (8M x 8, 4M x 16) Parallel 55ns 52-TSOP II
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - R1WV6416RSD-5SI#B0-ND - DigiKey
Thief River Falls, MN, United States
SRAM Memory IC 64Mb (8M x 8, 4M x 16) Parallel 55ns 52-TSOP II

SRAM Memory IC 64Mb (8M x 8, 4M x 16) Parallel 55ns 52-TSOP II

Buy Now Datasheet
Memory IC and Storage Component - 774-R1WV6416RSD-5SI#B0 - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-R1WV6416RSD-5SI#B0
Memory IC and Storage Component 774-R1WV6416RSD-5SI#B0
IC SRAM 64MBIT PAR 52TSOP II Product overview: R1WV6416RSD-5SI#B0 from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-R1WV6416RSD-5SI# B0 can be used for catalog matching and distributor lookup.

IC SRAM 64MBIT PAR 52TSOP II Product overview: R1WV6416RSD-5SI#B0 from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-R1WV6416RSD-5SI#B0 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IC SRAM 64MBIT PAR 52TSOP II

IC SRAM 64MBIT PAR 52TSOP II

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - R1WV6416RSD-5SI#B0 - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory
R1WV6416RSD-5SI#B0
Integrated Circuits (ICs) - Memory R1WV6416RSD-5SI#B0
IC SRAM 64MBIT PAR 52TSOP II

IC SRAM 64MBIT PAR 52TSOP II

Supplier's Site
Sram, 64Mbit, -40 To 85Deg C; Memory Size Renesas - 84AC2587 - Newark, An Avnet Company
Chicago, IL, United States
Sram, 64Mbit, -40 To 85Deg C; Memory Size Renesas
84AC2587
Sram, 64Mbit, -40 To 85Deg C; Memory Size Renesas 84AC2587
SRAM, 64MBIT, -40 TO 85DEG C; Memory Size:64Mbit; SRAM Memory Configuration:4M x 16bit / 8M x 8bit; Supply Voltage Range:2.7V to 3.6V; Memory Case Style:UTSOP-II; No. of Pins:52Pins; Access Time:55ns; Operating Temperature Min:-40°C;RoHS Compliant: Yes

SRAM, 64MBIT, -40 TO 85DEG C; Memory Size:64Mbit; SRAM Memory Configuration:4M x 16bit / 8M x 8bit; Supply Voltage Range:2.7V to 3.6V; Memory Case Style:UTSOP-II; No. of Pins:52Pins; Access Time:55ns; Operating Temperature Min:-40°C;RoHS Compliant: Yes

Supplier's Site
Memory - R1WV6416RSD-5SI#B0 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 64Mbit Parallel 55 ns 52-TSOP II

SRAM - Asynchronous Memory IC 64Mbit Parallel 55 ns 52-TSOP II

Buy Now
Memory - R1WV6416RSD-5SI#B0 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM Memory IC 64Mbit Parallel 55 ns 52-TSOP II

SRAM Memory IC 64Mbit Parallel 55 ns 52-TSOP II

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Lingto Electronic Limited Acme Chip Technology Co., Limited Newark, An Avnet Company Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number R1WV6416RSD-5SI#B0-ND 774-R1WV6416RSD-5SI#B0 R1WV6416RSD-5SI#B0 R1WV6416RSD-5SI#B0 84AC2587 R1WV6416RSD-5SI#B0
Product Name Memory Memory IC and Storage Component Memory Integrated Circuits (ICs) - Memory Sram, 64Mbit, -40 To 85Deg C; Memory Size Renesas Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 C (-40 F) -40 to 85 C (-40 to 185 F)
Density 64000 kbits 64000 kbits 64000 kbits 64000 kbits 64000 kbits
Package Type "52-TFSOP (0.350"", 8.89mm Width)" Tray 52-TFSOP (0.350, 8.89mm Width) UTSOP-II 52-TFSOP (0.350\", 8.89mm Width)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MT42C4256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category NVRAM; VRAM
Access Time 100 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - CY14ME064J2-SXIT-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type SOIC; "8-SOIC (0.154"", 3.90mm Width)"
View Details
3 suppliers
Memory - 04188CBLBB-25 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 1.8 ns
Density 8000 kbits
View Details