Renesas Electronics Corporation Memory R1WV3216RBG-7SI#S0

Description
SRAM Memory IC 32Mb (2M x 16) Parallel 70ns 48-TFBGA (7.5x8.5)
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Description
SRAM Memory IC 32Mb (2M x 16) Parallel 70ns 48-TFBGA (7.5x8.5)
Request a Quote
Datasheet
Datasheet Summary
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The R1WV3216RBG-7SI#S0 is a 32-Mbit static RAM organized as 2,097,152 words by 16 bits, designed for low voltage applications. It operates with a single power supply voltage ranging from 2.7V to 3.6V and features a low standby current of 4µA at 3.0V. The device supports data retention at a minimum voltage of 2.0V and does not require clock signals or refresh cycles, simplifying its integration into designs. This memory chip is available in two package types: a 48-ball fine pitch ball grid array (f-BGA) measuring 7.5mm x 8.5mm and a 52-pin micro thin small outline mount device (µTSOP) with dimensions of 10.79mm x 10.49mm. Both packages are designed to optimize mounting area and wiring flexibility on printed circuit boards. The R1WV3216RBG-7SI#S0 is suitable for applications that prioritize simple interfacing and battery operation, making it a viable choice for various electronic devices requiring efficient memory solutions.

Datasheet Summary
Powered by GS/AI

The R1WV3216RBG-7SI#S0 is a 32-Mbit static RAM organized as 2,097,152 words by 16 bits, designed for low voltage applications. It operates with a single power supply voltage ranging from 2.7V to 3.6V and features a low standby current of 4µA at 3.0V. The device supports data retention at a minimum voltage of 2.0V and does not require clock signals or refresh cycles, simplifying its integration into designs. This memory chip is available in two package types: a 48-ball fine pitch ball grid array (f-BGA) measuring 7.5mm x 8.5mm and a 52-pin micro thin small outline mount device (µTSOP) with dimensions of 10.79mm x 10.49mm. Both packages are designed to optimize mounting area and wiring flexibility on printed circuit boards. The R1WV3216RBG-7SI#S0 is suitable for applications that prioritize simple interfacing and battery operation, making it a viable choice for various electronic devices requiring efficient memory solutions.

Suppliers

Company
Product
Description
Supplier Links
Memory - R1WV3216RBG-7SI#S0-ND - DigiKey
Thief River Falls, MN, United States
SRAM Memory IC 32Mb (2M x 16) Parallel 70ns 48-TFBGA (7.5x8.5)

SRAM Memory IC 32Mb (2M x 16) Parallel 70ns 48-TFBGA (7.5x8.5)

Buy Now Datasheet
IC SRAM 32MBIT PARALLEL 48FBGA

IC SRAM 32MBIT PARALLEL 48FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - R1WV3216RBG-7SI#S0 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
R1WV3216RBG-7SI#S0
Integrated Circuits (ICs) - Memory - Memory R1WV3216RBG-7SI#S0
IC SRAM 32MBIT PARALLEL 48TFBGA

IC SRAM 32MBIT PARALLEL 48TFBGA

Supplier's Site
Memory - R1WV3216RBG-7SI#S0 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM Memory IC 32Mbit Parallel 70 ns 48-TFBGA (7.5x8.5)

SRAM Memory IC 32Mbit Parallel 70 ns 48-TFBGA (7.5x8.5)

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number R1WV3216RBG-7SI#S0-ND R1WV3216RBG-7SI#S0 R1WV3216RBG-7SI#S0 R1WV3216RBG-7SI#S0
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 32000 kbits 32000 kbits 32000 kbits 32000 kbits
Package Type 48-TFBGA BGA; 48-TFBGA
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