The R1RP0416DGE-2LR#B1 is a 4-Mbit high-speed static RAM organized as 256-k words by 16 bits. It features a maximum access time of 12 ns and operates with a single 5.0V supply, allowing for a ±10% voltage tolerance. This SRAM is designed for applications requiring high speed and density, such as cache and buffer memory. The device is completely static, with equal access and cycle times, and is directly TTL compatible for all inputs and outputs. The operating current is specified at a maximum of 170 mA, with a TTL standby current of 40 mA and a CMOS standby current of 5 mA for the L-version. Data retention current is 0.5 mA for the L-version and 0.2 mA for the S-version, with a minimum data retention voltage of 2V. The product is available in a 400-mil 44-pin plastic SOJ package. This memory component is suitable for engineers looking for reliable, high-speed memory solutions in their designs.
SRAM Memory IC 4Mb (256K x 16) Parallel 12ns 44-SOJ
IC SRAM 4MBIT PARALLEL 44SOJ
IC SRAM 4MBIT PARALLEL 44SOJ
SRAM Memory IC 4Mbit Parallel 12 ns 44-SOJ
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | R1RP0416DGE-2LR#B1-ND | R1RP0416DGE-2LR#B1 | R1RP0416DGE-2LR#B1 | R1RP0416DGE-2LR#B1 |
| Product Name | Memory | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | |
| Density | 4000 kbits | 4000 kbits | 4000 kbits | 4000 kbits |
