Renesas Electronics Corporation Integrated Circuits (ICs) - Memory R1LV0216BSB-5SI#B1

Description
Win Source Part Number: 1087104-R1LV0216BSB- 5SI#B1 Category: Integrated Circuits (ICs)>Memory Package: Tube Standard Package: 135 Mounting: SMD (SMT) Technology: SRAM Memory Type: Volatile Memory Size: 2Mb (128K x 16) Access Time: 55 ns Voltage - Supply: 2.7V ~ 3.6V Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: SRAM Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Alternative Parts (Cross-Reference): IS61C6416AL-12TLI; IS61WV5128BLL-10TLI; IS61WV25616BLL-10TLI ; CY7C109D-10VXI; CY62128EV30LL-45ZAXI ; CY7C199D-10VXI; ECCN: 3A991B2A Fake Threat In the Open Market: 85 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0041 Mfr: Renesas Electronics America Inc Other Names: -1161-R1LV0216BSB-5S I#B1 Base Product Number: R1LV0216
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Description
Win Source Part Number: 1087104-R1LV0216BSB- 5SI#B1 Category: Integrated Circuits (ICs)>Memory Package: Tube Standard Package: 135 Mounting: SMD (SMT) Technology: SRAM Memory Type: Volatile Memory Size: 2Mb (128K x 16) Access Time: 55 ns Voltage - Supply: 2.7V ~ 3.6V Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: SRAM Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Alternative Parts (Cross-Reference): IS61C6416AL-12TLI; IS61WV5128BLL-10TLI; IS61WV25616BLL-10TLI ; CY7C109D-10VXI; CY62128EV30LL-45ZAXI ; CY7C199D-10VXI; ECCN: 3A991B2A Fake Threat In the Open Market: 85 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0041 Mfr: Renesas Electronics America Inc Other Names: -1161-R1LV0216BSB-5S I#B1 Base Product Number: R1LV0216
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Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - 1087104-R1LV0216BSB-5SI#B1 - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
1087104-R1LV0216BSB-5SI#B1
Integrated Circuits (ICs) - Memory 1087104-R1LV0216BSB-5SI#B1
Win Source Part Number: 1087104-R1LV0216BSB- 5SI#B1 Category: Integrated Circuits (ICs)>Memory Package: Tube Standard Package: 135 Mounting: SMD (SMT) Technology: SRAM Memory Type: Volatile Memory Size: 2Mb (128K x 16) Access Time: 55 ns Voltage - Supply: 2.7V ~ 3.6V Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: SRAM Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Alternative Parts (Cross-Reference): IS61C6416AL-12TLI; IS61WV5128BLL-10TLI; IS61WV25616BLL-10TLI ; CY7C109D-10VXI; CY62128EV30LL-45ZAXI ; CY7C199D-10VXI; ECCN: 3A991B2A Fake Threat In the Open Market: 85 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0041 Mfr: Renesas Electronics America Inc Other Names: -1161-R1LV0216BSB-5S I#B1 Base Product Number: R1LV0216

Win Source Part Number: 1087104-R1LV0216BSB-5SI#B1
Category: Integrated Circuits (ICs)>Memory
Package: Tube
Standard Package: 135
Mounting: SMD (SMT)
Technology: SRAM
Memory Type: Volatile
Memory Size: 2Mb (128K x 16)
Access Time: 55 ns
Voltage - Supply: 2.7V ~ 3.6V
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: SRAM
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Alternative Parts (Cross-Reference): IS61C6416AL-12TLI; IS61WV5128BLL-10TLI; IS61WV25616BLL-10TLI; CY7C109D-10VXI; CY62128EV30LL-45ZAXI; CY7C199D-10VXI;
ECCN: 3A991B2A
Fake Threat In the Open Market: 85 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0041
Mfr: Renesas Electronics America Inc
Other Names: -1161-R1LV0216BSB-5SI#B1
Base Product Number: R1LV0216

Buy Now Datasheet
Memory IC and Storage Component - 774-R1LV0216BSB-5SI#B1 - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-R1LV0216BSB-5SI#B1
Memory IC and Storage Component 774-R1LV0216BSB-5SI#B1
IC SRAM 2MBIT PARALLEL 44TSOP II Product overview: R1LV0216BSB-5SI#B1 from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-R1LV0216BSB-5SI# B1 can be used for catalog matching and distributor lookup.

IC SRAM 2MBIT PARALLEL 44TSOP II Product overview: R1LV0216BSB-5SI#B1 from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-R1LV0216BSB-5SI#B1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - R1LV0216BSB-5SI#B1-ND - DigiKey
Thief River Falls, MN, United States
SRAM Memory IC 2Mb (128K x 16) Parallel 55ns 44-TSOP II

SRAM Memory IC 2Mb (128K x 16) Parallel 55ns 44-TSOP II

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - R1LV0216BSB-5SI#B1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
R1LV0216BSB-5SI#B1
Integrated Circuits (ICs) - Memory - Memory R1LV0216BSB-5SI#B1
IC SRAM 2MBIT PARALLEL 44TSOP II

IC SRAM 2MBIT PARALLEL 44TSOP II

Supplier's Site
Memory IC - 136759291 - Radwell International
Willingboro, NJ, United States
Memory IC
136759291
Memory IC 136759291
STANDARD SRAM, 128KX16, 55NS, CMOS, TSOP2-44. FREE 2 YEAR RADWELL WARRANTY

STANDARD SRAM, 128KX16, 55NS, CMOS, TSOP2-44. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
IC SRAM 2MBIT PARALLEL 44TSOP II

IC SRAM 2MBIT PARALLEL 44TSOP II

Supplier's Site Datasheet
Lpsram, 2Mbit, -40 To 85Deg C Rohs Compliant Renesas - 66AH6950 - Newark, An Avnet Company
Chicago, IL, United States
Lpsram, 2Mbit, -40 To 85Deg C Rohs Compliant Renesas
66AH6950
Lpsram, 2Mbit, -40 To 85Deg C Rohs Compliant Renesas 66AH6950
LPSRAM, 2MBIT, -40 TO 85DEG C ROHS COMPLIANT: YES

LPSRAM, 2MBIT, -40 TO 85DEG C ROHS COMPLIANT: YES

Supplier's Site Datasheet
Memory - R1LV0216BSB-5SI#B1 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM Memory IC 2Mbit Parallel 55 ns 44-TSOP II

SRAM Memory IC 2Mbit Parallel 55 ns 44-TSOP II

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Radwell International Lingto Electronic Limited Newark, An Avnet Company Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1087104-R1LV0216BSB-5SI#B1 774-R1LV0216BSB-5SI#B1 R1LV0216BSB-5SI#B1-ND R1LV0216BSB-5SI#B1 136759291 R1LV0216BSB-5SI#B1 66AH6950 R1LV0216BSB-5SI#B1
Product Name Integrated Circuits (ICs) - Memory Memory IC and Storage Component Memory Integrated Circuits (ICs) - Memory - Memory Memory IC Memory Lpsram, 2Mbit, -40 To 85Deg C Rohs Compliant Renesas Memory
Memory Category Volatile; SRAM Chip Volatile; SRAM Chip SRAM Chip Volatile; SRAM Chip SRAM Chip SRAM; SRAM Chip SRAM Chip SRAM; SRAM Chip
Access Time 55 ns 55 ns 55 ns 55 ns
Cycle Time 55 ns 55 ns 55 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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