Renesas Electronics Corporation Integrated Circuits (ICs) - Memory R1LV0108ESN-7SI#B0

Description
Win Source Part Number: 1087103-R1LV0108ESN- 7SI#B0 Category: Integrated Circuits (ICs)>Memory Package: Tube Standard Package: 1 Mounting: SMD (SMT) Technology: SRAM Memory Type: Volatile Memory Size: 1Mb (128K x 8) Access Time: 70 ns Voltage - Supply: 2.7V ~ 3.6V Package / Case: 32-SOIC (0.450", 11.40mm Width) Supplier Device Package: 32-SOP Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: SRAM Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Alternative Parts (Cross-Reference): BQ4013LYMA-70N; IS62WV1288BLL-55QLI; AS6C1008-55SIN; R1LP0108ESP-7SR#S0; R1LP0108ESP-7SI#B0; R1LP0108ESP-5SI#B0; IS62C1024AL-35QLI; ECCN: EAR99 Fake Threat In the Open Market: 68 pct. HTSUS: 8542.32.0041 Mfr: Renesas Electronics America Inc Other Names: 2156-R1LV0108ESN-7SI #B0-RE,RENRNSR1LV010 8ESN-7SI#B0 Product Status: Obsolete
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Description
Win Source Part Number: 1087103-R1LV0108ESN- 7SI#B0 Category: Integrated Circuits (ICs)>Memory Package: Tube Standard Package: 1 Mounting: SMD (SMT) Technology: SRAM Memory Type: Volatile Memory Size: 1Mb (128K x 8) Access Time: 70 ns Voltage - Supply: 2.7V ~ 3.6V Package / Case: 32-SOIC (0.450", 11.40mm Width) Supplier Device Package: 32-SOP Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: SRAM Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Alternative Parts (Cross-Reference): BQ4013LYMA-70N; IS62WV1288BLL-55QLI; AS6C1008-55SIN; R1LP0108ESP-7SR#S0; R1LP0108ESP-7SI#B0; R1LP0108ESP-5SI#B0; IS62C1024AL-35QLI; ECCN: EAR99 Fake Threat In the Open Market: 68 pct. HTSUS: 8542.32.0041 Mfr: Renesas Electronics America Inc Other Names: 2156-R1LV0108ESN-7SI #B0-RE,RENRNSR1LV010 8ESN-7SI#B0 Product Status: Obsolete
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Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - 1087103-R1LV0108ESN-7SI#B0 - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
1087103-R1LV0108ESN-7SI#B0
Integrated Circuits (ICs) - Memory 1087103-R1LV0108ESN-7SI#B0
Win Source Part Number: 1087103-R1LV0108ESN- 7SI#B0 Category: Integrated Circuits (ICs)>Memory Package: Tube Standard Package: 1 Mounting: SMD (SMT) Technology: SRAM Memory Type: Volatile Memory Size: 1Mb (128K x 8) Access Time: 70 ns Voltage - Supply: 2.7V ~ 3.6V Package / Case: 32-SOIC (0.450", 11.40mm Width) Supplier Device Package: 32-SOP Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: SRAM Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Alternative Parts (Cross-Reference): BQ4013LYMA-70N; IS62WV1288BLL-55QLI; AS6C1008-55SIN; R1LP0108ESP-7SR#S0; R1LP0108ESP-7SI#B0; R1LP0108ESP-5SI#B0; IS62C1024AL-35QLI; ECCN: EAR99 Fake Threat In the Open Market: 68 pct. HTSUS: 8542.32.0041 Mfr: Renesas Electronics America Inc Other Names: 2156-R1LV0108ESN-7SI #B0-RE,RENRNSR1LV010 8ESN-7SI#B0 Product Status: Obsolete

Win Source Part Number: 1087103-R1LV0108ESN-7SI#B0
Category: Integrated Circuits (ICs)>Memory
Package: Tube
Standard Package: 1
Mounting: SMD (SMT)
Technology: SRAM
Memory Type: Volatile
Memory Size: 1Mb (128K x 8)
Access Time: 70 ns
Voltage - Supply: 2.7V ~ 3.6V
Package / Case: 32-SOIC (0.450", 11.40mm Width)
Supplier Device Package: 32-SOP
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: SRAM
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Alternative Parts (Cross-Reference): BQ4013LYMA-70N; IS62WV1288BLL-55QLI; AS6C1008-55SIN; R1LP0108ESP-7SR#S0; R1LP0108ESP-7SI#B0; R1LP0108ESP-5SI#B0; IS62C1024AL-35QLI;
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
HTSUS: 8542.32.0041
Mfr: Renesas Electronics America Inc
Other Names: 2156-R1LV0108ESN-7SI#B0-RE,RENRNSR1LV0108ESN-7SI#B0
Product Status: Obsolete

Buy Now Datasheet
 - R1LV0108ESN-7SI#B0 - Rochester Electronics
Newburyport, MA, United States
Standard SRAM, 128KX8, 70ns, CMOS, PDSO32

Standard SRAM, 128KX8, 70ns, CMOS, PDSO32

Supplier's Site Datasheet
1Mb Memory IC and Storage Component - 774-R1LV0108ESN-7SI#B0 - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
1Mb Memory IC and Storage Component
774-R1LV0108ESN-7SI#B0
1Mb Memory IC and Storage Component 774-R1LV0108ESN-7SI#B0
IC SRAM 1MBIT PARALLEL 32SOP / SRAM Memory IC 1Mb (128K x 8) Parallel 70 ns 32-SOP Product overview: R1LV0108ESN-7SI#B0 from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1Mb. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1Mb, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-R1LV0108ESN-7SI# B0 can be used for catalog matching and distributor lookup.

IC SRAM 1MBIT PARALLEL 32SOP / SRAM Memory IC 1Mb (128K x 8) Parallel 70 ns 32-SOP Product overview: R1LV0108ESN-7SI#B0 from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1Mb. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1Mb, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-R1LV0108ESN-7SI#B0 can be used for catalog matching and distributor lookup.

Supplier's Site
IC SRAM 1MBIT PARALLEL 32SOP

IC SRAM 1MBIT PARALLEL 32SOP

Supplier's Site Datasheet
Memory - R1LV0108ESN-7SI#B0 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM Memory IC 1Mbit Parallel 70 ns 32-SOP

SRAM Memory IC 1Mbit Parallel 70 ns 32-SOP

Buy Now Datasheet
Memory - R1LV0108ESN-7SI#B0 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM Memory IC 1Mbit Parallel 70 ns 32-SOP

SRAM Memory IC 1Mbit Parallel 70 ns 32-SOP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - R1LV0108ESN-7SI#B0 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
R1LV0108ESN-7SI#B0
Integrated Circuits (ICs) - Memory - Memory R1LV0108ESN-7SI#B0
IC SRAM 1MBIT PARALLEL 32SOP

IC SRAM 1MBIT PARALLEL 32SOP

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics ERSAELECTRONICS PTE. LTD. Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1087103-R1LV0108ESN-7SI#B0 R1LV0108ESN-7SI#B0 774-R1LV0108ESN-7SI#B0 R1LV0108ESN-7SI#B0 R1LV0108ESN-7SI#B0 R1LV0108ESN-7SI#B0
Product Name Integrated Circuits (ICs) - Memory 1Mb Memory IC and Storage Component Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Volatile; SRAM Chip SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 70 ns 70 ns 70 ns 70 ns
Cycle Time 70 ns 70 ns 70 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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