Rochester Electronics Memory 27C512-12/L092

Description
512K (64K X 8) CMOS EPROM
  • Memory - 27C512-12/L092 - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
512K (64K X 8) CMOS EPROM
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 27C512-12/L092 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
27C512-12/L092
Memory 27C512-12/L092
512K (64K X 8) CMOS EPROM

512K (64K X 8) CMOS EPROM

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number 27C512-12/L092
Product Name Memory
Memory Category EPROM; EPROM
Unlock Full Specs
to access all available technical data

Similar Products

- 27S33APC - Rochester Electronics
Rochester Electronics
Integrated Circuits (ICs) - Memory - Memory
27S33APC
Specs
Memory Category PROM
Package Type DIP; PDIP24
View Details
2 suppliers
Infineon Technologies AG
Memory IC and Storage Component
CY7C261-45QMB
Specs
Memory Category EPROM
Access Time 45 ns
Operating Temperature -55 C (-67 F)
View Details
Memory - AS4SD32M16 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS4SD32M16
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 256000 kbits
View Details
Integrated Circuits (ICs) - Memory - Memory - JBP28L42MJ - Shenzhen Shengyu Electronics Technology Limited
Texas Instruments
Integrated Circuits (ICs) - Memory - Memory
JBP28L42MJ
Specs
Memory Category PROM
Density 512 kbits
Supply Voltage 20-CDIP (0.300, 7.62mm)
View Details
2 suppliers