Rochester Electronics Memory 27C512-12/L092

Description
512K (64K X 8) CMOS EPROM
  • Memory - 27C512-12/L092 - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
512K (64K X 8) CMOS EPROM
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 27C512-12/L092 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
27C512-12/L092
Memory 27C512-12/L092
512K (64K X 8) CMOS EPROM

512K (64K X 8) CMOS EPROM

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number 27C512-12/L092
Product Name Memory
Memory Category EPROM; EPROM
Unlock Full Specs
to access all available technical data

Similar Products

Memory IC and Storage Component - 736-DP8421AV-20 - ERSAELECTRONICS PTE. LTD.
Texas Instruments
Memory IC and Storage Component
DP8421AV-20
Specs
Memory Category DRAM Chip
Operating Temperature 0 C (32 F)
Package Type LCC
View Details
4 suppliers
Memory - CY27C512-90ZC - Lingto Electronic Limited
Rochester Electronics
Memory
CY27C512-90ZC
Specs
Memory Category EPROM; EPROM
Access Time 90 ns
Density 512 kbits
View Details
Memory - RAM - AS27C256-20JM - 1212176-AS27C256-20JM - Win Source Electronics
Micross Components, Inc.
Memory - RAM - AS27C256-20JM
AS27C256-20JM
Specs
Memory Category SRAM Chip
Access Time 200 ns
Operating Temperature -55 C (-67 F)
View Details
2 suppliers
Memory IC and Storage Component - 505-2774_256MB_16Mx8_16C_Low_Profile - ERSAELECTRONICS PTE. LTD.
Infineon Technologies AG
Memory IC and Storage Component
2774_256MB_16Mx8_16C_Low_Profile
View Details