Renesas Electronics Corporation Integrated Circuits (ICs) - Memory - Memory R1LV0108ESF-7SI#B0

Description
Win Source Part Number: 1356343-R1LV0108ESF- 7SI#B0 Category: Integrated Circuits (ICs) - Memory - Memory Temperature Range - Operating: -40°C ~ 85°C (TA) Fake Threat In the Open Market: 48 pct. MSL Level: 3 (168 Hours) Mfr: Renesas Electronics America Inc Package: Bulk Product Status: Active Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP Base Product Number: R1LV0108 Technology: SRAM - Asynchronous Mounting Type: Surface Mount HTSUS: 8542.32.0041 REACH Status: REACH Unaffected ECCN: EAR99 Voltage - Supply: 2.7V ~ 3.6V Memory Type: Volatile Memory Format: SRAM Memory Size: 1Mbit Memory Organization: 128K x 8 Memory Interface: Parallel Write Cycle Time - Word, Page: 70ns Access Time: 70 ns
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Description
Win Source Part Number: 1356343-R1LV0108ESF- 7SI#B0 Category: Integrated Circuits (ICs) - Memory - Memory Temperature Range - Operating: -40°C ~ 85°C (TA) Fake Threat In the Open Market: 48 pct. MSL Level: 3 (168 Hours) Mfr: Renesas Electronics America Inc Package: Bulk Product Status: Active Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP Base Product Number: R1LV0108 Technology: SRAM - Asynchronous Mounting Type: Surface Mount HTSUS: 8542.32.0041 REACH Status: REACH Unaffected ECCN: EAR99 Voltage - Supply: 2.7V ~ 3.6V Memory Type: Volatile Memory Format: SRAM Memory Size: 1Mbit Memory Organization: 128K x 8 Memory Interface: Parallel Write Cycle Time - Word, Page: 70ns Access Time: 70 ns
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Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - 1356343-R1LV0108ESF-7SI#B0 - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory - Memory
1356343-R1LV0108ESF-7SI#B0
Integrated Circuits (ICs) - Memory - Memory 1356343-R1LV0108ESF-7SI#B0
Win Source Part Number: 1356343-R1LV0108ESF- 7SI#B0 Category: Integrated Circuits (ICs) - Memory - Memory Temperature Range - Operating: -40°C ~ 85°C (TA) Fake Threat In the Open Market: 48 pct. MSL Level: 3 (168 Hours) Mfr: Renesas Electronics America Inc Package: Bulk Product Status: Active Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP Base Product Number: R1LV0108 Technology: SRAM - Asynchronous Mounting Type: Surface Mount HTSUS: 8542.32.0041 REACH Status: REACH Unaffected ECCN: EAR99 Voltage - Supply: 2.7V ~ 3.6V Memory Type: Volatile Memory Format: SRAM Memory Size: 1Mbit Memory Organization: 128K x 8 Memory Interface: Parallel Write Cycle Time - Word, Page: 70ns Access Time: 70 ns

Win Source Part Number: 1356343-R1LV0108ESF-7SI#B0
Category: Integrated Circuits (ICs) - Memory - Memory
Temperature Range - Operating: -40°C ~ 85°C (TA)
Fake Threat In the Open Market: 48 pct.
MSL Level: 3 (168 Hours)
Mfr: Renesas Electronics America Inc
Package: Bulk
Product Status: Active
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP
Base Product Number: R1LV0108
Technology: SRAM - Asynchronous
Mounting Type: Surface Mount
HTSUS: 8542.32.0041
REACH Status: REACH Unaffected
ECCN: EAR99
Voltage - Supply: 2.7V ~ 3.6V
Memory Type: Volatile
Memory Format: SRAM
Memory Size: 1Mbit
Memory Organization: 128K x 8
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Access Time: 70 ns

Buy Now Datasheet
 - R1LV0108ESF-7SI#B0 - Rochester Electronics
Newburyport, MA, United States
Standard SRAM, 128KX8, 70ns, CMOS, PDSO32

Standard SRAM, 128KX8, 70ns, CMOS, PDSO32

Supplier's Site Datasheet
Memory IC and Storage Component - 774-R1LV0108ESF-7SI#B0 - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-R1LV0108ESF-7SI#B0
Memory IC and Storage Component 774-R1LV0108ESF-7SI#B0
IC SRAM 1MBIT PARALLEL 32TSOP I Product overview: R1LV0108ESF-7SI#B0 from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-R1LV0108ESF-7SI# B0 can be used for catalog matching and distributor lookup.

IC SRAM 1MBIT PARALLEL 32TSOP I Product overview: R1LV0108ESF-7SI#B0 from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-R1LV0108ESF-7SI#B0 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - R1LV0108ESF-7SI#B0-ND - DigiKey
Thief River Falls, MN, United States
SRAM Memory IC 1Mb (128K x 8) Parallel 70ns 32-TSOP I

SRAM Memory IC 1Mb (128K x 8) Parallel 70ns 32-TSOP I

Buy Now Datasheet
IC SRAM 1MBIT PARALLEL 32TSOP

IC SRAM 1MBIT PARALLEL 32TSOP

Supplier's Site Datasheet
Memory - R1LV0108ESF-7SI#B0 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM Memory IC 1Mbit Parallel 70 ns 32-TSOP I

SRAM Memory IC 1Mbit Parallel 70 ns 32-TSOP I

Buy Now Datasheet
Memory - R1LV0108ESF-7SI#B0 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 70 ns 32-TSOP

SRAM - Asynchronous Memory IC 1Mbit Parallel 70 ns 32-TSOP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - R1LV0108ESF-7SI#B0 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
R1LV0108ESF-7SI#B0
Integrated Circuits (ICs) - Memory - Memory R1LV0108ESF-7SI#B0
IC SRAM 1MBIT PARALLEL 32TSOP I

IC SRAM 1MBIT PARALLEL 32TSOP I

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics ERSAELECTRONICS PTE. LTD. DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1356343-R1LV0108ESF-7SI#B0 R1LV0108ESF-7SI#B0 774-R1LV0108ESF-7SI#B0 R1LV0108ESF-7SI#B0-ND R1LV0108ESF-7SI#B0 R1LV0108ESF-7SI#B0 R1LV0108ESF-7SI#B0
Product Name Integrated Circuits (ICs) - Memory - Memory Memory IC and Storage Component Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Volatile; SRAM Chip SRAM Chip Volatile; SRAM Chip SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 70 ns 70 ns 70 ns 70 ns
Cycle Time 70 ns 70 ns 70 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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