Renesas Electronics Corporation Memory R1EV58256BSCNBI#S2

Description
EEPROM Memory IC 256Kbit Parallel 85 ns 28-SOP
Datasheet
Description
EEPROM Memory IC 256Kbit Parallel 85 ns 28-SOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - R1EV58256BSCNBI#S2 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 256Kbit Parallel 85 ns 28-SOP

EEPROM Memory IC 256Kbit Parallel 85 ns 28-SOP

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IC EEPROM 256KBIT PARALLEL 28SOP

IC EEPROM 256KBIT PARALLEL 28SOP

Supplier's Site
IC EEPROM 256KB CMOS PRSP0028DC

IC EEPROM 256KB CMOS PRSP0028DC

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - R1EV58256BSCNBI#S2 - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory
R1EV58256BSCNBI#S2
Integrated Circuits (ICs) - Memory R1EV58256BSCNBI#S2
IC EEPROM 256KB CMOS PRSP0028DC

IC EEPROM 256KB CMOS PRSP0028DC

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. ODG (Origin Data Global) Lingto Electronic Limited Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number R1EV58256BSCNBI#S2 R1EV58256BSCNBI#S2 R1EV58256BSCNBI#S2 R1EV58256BSCNBI#S2
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category EEPROM; EEPROM EEPROM; EEPROM EEPROM; EEPROM EEPROM; Non-Volatile
Access Time 85 ns 85 ns 85 ns 85 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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