Renesas Electronics Corporation Memory R1EV5801MBSDRDI#B0

Description
EEPROM Memory IC 1Mbit Parallel 150 ns 32-SOP
Datasheet
Description
EEPROM Memory IC 1Mbit Parallel 150 ns 32-SOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - R1EV5801MBSDRDI#B0 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 1Mbit Parallel 150 ns 32-SOP

EEPROM Memory IC 1Mbit Parallel 150 ns 32-SOP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - R1EV5801MBSDRDI#B0 - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory
R1EV5801MBSDRDI#B0
Integrated Circuits (ICs) - Memory R1EV5801MBSDRDI#B0
IC EEPROM 1MB SMD

IC EEPROM 1MB SMD

Supplier's Site
IC EEPROM 1MB SMD

IC EEPROM 1MB SMD

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number R1EV5801MBSDRDI#B0 R1EV5801MBSDRDI#B0 R1EV5801MBSDRDI#B0
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category EEPROM; EEPROM EEPROM; Non-Volatile EEPROM; EEPROM
Access Time 150 ns 150 ns 150 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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