Renesas Electronics Corporation Single FETs, MOSFETs NP90N03VHG-E1-AY

Description
N-Channel 30V 90A (Tc) 1.2W (Ta), 105W (Tc) Surface Mount TO-252
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Description
N-Channel 30V 90A (Tc) 1.2W (Ta), 105W (Tc) Surface Mount TO-252
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NP90N03VHG-E1-AY-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NP90N03VHG-E1-AY-ND
Single FETs, MOSFETs NP90N03VHG-E1-AY-ND
N-Channel 30V 90A (Tc) 1.2W (Ta), 105W (Tc) Surface Mount TO-252

N-Channel 30V 90A (Tc) 1.2W (Ta), 105W (Tc) Surface Mount TO-252

Buy Now Datasheet
Singapore
30V 90A TO252 MOSFET Transistor
278-NP90N03VHG-E1-AY
30V 90A TO252 MOSFET Transistor 278-NP90N03VHG-E1-AY
MOSFET N-CH 30V 90A TO252 Product overview: NP90N03VHG-E1-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 90A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 90A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NP90N03VHG-E1-AY can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 90A TO252 Product overview: NP90N03VHG-E1-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 90A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 90A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NP90N03VHG-E1-AY can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP90N03VHG-E1-AY - 1083362-NP90N03VHG-E1-AY - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP90N03VHG-E1-AY
1083362-NP90N03VHG-E1-AY
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP90N03VHG-E1-AY 1083362-NP90N03VHG-E1-AY
Manufacturer: Renesas Electronics America Win Source Part Number: 1083362-NP90N03VHG-E 1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.2W (Ta), 105W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 135nC @ 10V Max Input Capacitance: 7500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.2 mOhm @ 45A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 1083362-NP90N03VHG-E1-AY
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 90A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 135nC @ 10V
Max Input Capacitance: 7500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.2 mOhm @ 45A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NP90N03VHG-E1-AY - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NP90N03VHG-E1-AY
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NP90N03VHG-E1-AY
MOSFET N-CH 30V 90A TO252

MOSFET N-CH 30V 90A TO252

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NP90N03VHG-E1-AY-ND 278-NP90N03VHG-E1-AY 1083362-NP90N03VHG-E1-AY NP90N03VHG-E1-AY
Product Name Single FETs, MOSFETs 30V 90A TO252 MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP90N03VHG-E1-AY Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) SOT3; TO-252 (DPAK); TO-252 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Grade / Operating Range Automotive
PD 1200 milliwatts 1200 to 105000 milliwatts
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