Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP88N04KUG-E1-AZ NP88N04KUG-E1-AZ

Description
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1082628-NP88N04KUG-E 1-AZ Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 40 V Input Capacitance: 15 nF Power Dissipation: 1.8 W Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-263-3 Popularity: Low Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Shortage Mount: Surface Mount RoHS: Compliant Max Power Dissipation: 1.8 W Continuous Drain Current (ID): 88 A Drain to Source Breakdown Voltage: 40 V Drain to Source Resistance: 2.3 mΩ Gate to Source Voltage (Vgs): 20 V Rds On Max: 2.9 mΩ
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Description
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1082628-NP88N04KUG-E 1-AZ Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 40 V Input Capacitance: 15 nF Power Dissipation: 1.8 W Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-263-3 Popularity: Low Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Shortage Mount: Surface Mount RoHS: Compliant Max Power Dissipation: 1.8 W Continuous Drain Current (ID): 88 A Drain to Source Breakdown Voltage: 40 V Drain to Source Resistance: 2.3 mΩ Gate to Source Voltage (Vgs): 20 V Rds On Max: 2.9 mΩ
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP88N04KUG-E1-AZ - 1082628-NP88N04KUG-E1-AZ - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP88N04KUG-E1-AZ
1082628-NP88N04KUG-E1-AZ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP88N04KUG-E1-AZ 1082628-NP88N04KUG-E1-AZ
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1082628-NP88N04KUG-E 1-AZ Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 40 V Input Capacitance: 15 nF Power Dissipation: 1.8 W Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-263-3 Popularity: Low Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Shortage Mount: Surface Mount RoHS: Compliant Max Power Dissipation: 1.8 W Continuous Drain Current (ID): 88 A Drain to Source Breakdown Voltage: 40 V Drain to Source Resistance: 2.3 mΩ Gate to Source Voltage (Vgs): 20 V Rds On Max: 2.9 mΩ

Manufacturer: Renesas Electronics America
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1082628-NP88N04KUG-E1-AZ
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 40 V
Input Capacitance: 15 nF
Power Dissipation: 1.8 W
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-263-3
Popularity: Low
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Shortage
Mount: Surface Mount
RoHS: Compliant
Max Power Dissipation: 1.8 W
Continuous Drain Current (ID): 88 A
Drain to Source Breakdown Voltage: 40 V
Drain to Source Resistance: 2.3 mΩ
Gate to Source Voltage (Vgs): 20 V
Rds On Max: 2.9 mΩ

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1082628-NP88N04KUG-E1-AZ
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP88N04KUG-E1-AZ
V(BR)DSS 40 volts
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