Manufacturer: Renesas Electronics America
Win Source Part Number: 138990-NP82N055PUG-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-263
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 82A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 160nC @ 10V
Max Input Capacitance: 9600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.2 mOhm @ 41A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
N-Channel 55V 82A (Tc) 1.8W (Ta), 143W (Tc) Surface Mount TO-263
MOSFET N-CH 55V 82A TO-263
MOSFET N-CH 55V 82A TO263
| Win Source Electronics | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 138990-NP82N055PUG-E1-AY | NP82N055PUG-E1-AYTR-ND | 668-NP82N055PUG-E1-AY | NP82N055PUG-E1-AY | NP82N055PUG-E1-AY |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP82N055PUG-E1-AY | Single FETs, MOSFETs | MOSFET N-CH 55V 82A TO-263 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 55 volts | ||||
| PD | 1800 to 143000 milliwatts | 1800 milliwatts | |||
| TJ | 175 C (347 F) | 175 C (347 F) |
