Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP82N03PUG-E1-AY NP82N03PUG-E1-AY

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1083353-NP82N03PUG-E 1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta), 143W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 82A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 160nC @ 10V Max Input Capacitance: 9080pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.8 mOhm @ 41A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1083353-NP82N03PUG-E 1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta), 143W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 82A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 160nC @ 10V Max Input Capacitance: 9080pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.8 mOhm @ 41A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
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Suppliers

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Product
Description
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP82N03PUG-E1-AY - 1083353-NP82N03PUG-E1-AY - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP82N03PUG-E1-AY
1083353-NP82N03PUG-E1-AY
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP82N03PUG-E1-AY 1083353-NP82N03PUG-E1-AY
Manufacturer: Renesas Electronics America Win Source Part Number: 1083353-NP82N03PUG-E 1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta), 143W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 82A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 160nC @ 10V Max Input Capacitance: 9080pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.8 mOhm @ 41A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 1083353-NP82N03PUG-E1-AY
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 82A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 160nC @ 10V
Max Input Capacitance: 9080pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.8 mOhm @ 41A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - NP82N03PUG-E1-AY-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NP82N03PUG-E1-AY-ND
Single FETs, MOSFETs NP82N03PUG-E1-AY-ND
N-Channel 30V 82A (Tc) 1.8W (Ta), 143W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 30V 82A (Tc) 1.8W (Ta), 143W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NP82N03PUG-E1-AY - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NP82N03PUG-E1-AY
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NP82N03PUG-E1-AY
MOSFET N-CH 30V 82A TO263

MOSFET N-CH 30V 82A TO263

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1083353-NP82N03PUG-E1-AY NP82N03PUG-E1-AY-ND NP82N03PUG-E1-AY
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP82N03PUG-E1-AY Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 1800 to 143000 milliwatts
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