Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP80N055KLE-E1-AY NP80N055KLE-E1-AY

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1083350-NP80N055KLE- E1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta), 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 175°C (TJ) Case / Package: TO-263 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 75nC @ 10V Max Input Capacitance: 4400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1083350-NP80N055KLE- E1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta), 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 175°C (TJ) Case / Package: TO-263 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 75nC @ 10V Max Input Capacitance: 4400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP80N055KLE-E1-AY - 1083350-NP80N055KLE-E1-AY - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP80N055KLE-E1-AY
1083350-NP80N055KLE-E1-AY
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP80N055KLE-E1-AY 1083350-NP80N055KLE-E1-AY
Manufacturer: Renesas Electronics America Win Source Part Number: 1083350-NP80N055KLE- E1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta), 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 175°C (TJ) Case / Package: TO-263 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 75nC @ 10V Max Input Capacitance: 4400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 1083350-NP80N055KLE-E1-AY
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta), 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-263
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 75nC @ 10V
Max Input Capacitance: 4400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - NP80N055KLE-E1-AY-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NP80N055KLE-E1-AY-ND
Single FETs, MOSFETs NP80N055KLE-E1-AY-ND
N-Channel 55V 80A (Tc) 1.8W (Ta), 120W (Tc) Surface Mount TO-263

N-Channel 55V 80A (Tc) 1.8W (Ta), 120W (Tc) Surface Mount TO-263

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NP80N055KLE-E1-AY
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NP80N055KLE-E1-AY
NP80N055KLE-E1-AY - SWITCHINGN-C

NP80N055KLE-E1-AY - SWITCHINGN-C

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1083350-NP80N055KLE-E1-AY NP80N055KLE-E1-AY-ND NP80N055KLE-E1-AY
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP80N055KLE-E1-AY Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 55 volts
PD 1800 to 120000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor - TGF2977-SM - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type QFN
View Details
4 suppliers
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRFS8409-7TRL - 769354-AUIRFS8409-7TRL - Win Source Electronics
Specs
PD 375000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3
View Details
6 suppliers