Manufacturer: Renesas Electronics America
Win Source Part Number: 1083336-NP55N03SUG-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.2W (Ta), 77W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-252 (MP-3ZK)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 55A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 93nC @ 10V
Max Input Capacitance: 5300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 mOhm @ 28A, 10V
Alternative Parts (Cross-Reference): NTD4905NT4G; NP55N03SUG-E2-AY; NP55N03SUG-E1-AY; BUK7207-30B;
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient
N-Channel 30V 55A (Tc) 1.2W (Ta), 77W (Tc) Surface Mount TO-252 (MP-3ZK)
MOSFET N-CH 30V 55A TO252
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1083336-NP55N03SUG-E1-AY | NP55N03SUG-E1-AY-ND | NP55N03SUG-E1-AY |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP55N03SUG-E1-AY | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 30 volts | ||
| PD | 1200 to 77000 milliwatts |
