Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP36P06SLG-E1 NP36P06SLG-E1

Manufacturer: Renesas Electronics America Win Source Part Number: 258912-NP36P06SLG-E1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.2W (Ta), 56W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-252 (MP-3ZK) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 36A (Tc) Max Gate Charge: 52nC @ 10V Max Input Capacitance: 3200pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 30 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited