Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP36P06SLG-E1 NP36P06SLG-E1

Manufacturer: Renesas Electronics America
Win Source Part Number: 258912-NP36P06SLG-E1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-252 (MP-3ZK)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 36A (Tc)
Max Gate Charge: 52nC @ 10V
Max Input Capacitance: 3200pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 30 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited

MOSFET P-CH 60V 36A TO-252 Product overview: NP36P06SLG-E1 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 36A, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 36A, TO-252, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-NP36P06SLG-E1 can be used for catalog matching and distributor lookup.