Renesas Electronics Corporation Single FETs, MOSFETs NP36P06SLG-E1-AY

P-Channel 60V 36A (Tc) 1.2W (Ta), 56W (Tc) Surface Mount TO-252 (MP-3ZK)

P-Channel 60V 36A (Tc) 1.2W (Ta), 56W (Tc) Surface Mount TO-252 (MP-3ZK)

P-Channel 60V 36A (Tc) 1.2W (Ta), 56W (Tc) Surface Mount TO-252 (MP-3ZK)

MOSFET P-CH 60V 36A TO252 Product overview: NP36P06SLG-E1-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 36A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 36A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NP36P06SLG-E1-AY can be used for catalog matching and distributor lookup.

Manufacturer: Renesas Electronics America
Win Source Part Number: 1083329-NP36P06SLG-E1-AY
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-252 (MP-3ZK)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 36A (Tc)
Max Gate Charge: 52nC @ 10V
Max Input Capacitance: 3200pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 30 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

MOSFET P-CH 60V 36A TO252