Renesas Electronics Corporation Memory M3032316045NX0IBCY

Description
32MB MRAM PARALLEL INTERFACE, 45
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Description
32MB MRAM PARALLEL INTERFACE, 45
Request a Quote Datasheet

Suppliers

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Product
Description
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32MB MRAM PARALLEL INTERFACE, 45

32MB MRAM PARALLEL INTERFACE, 45

Supplier's Site Datasheet
Memory - M3032316045NX0IBCY - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
MRAM (Magnetoresistive RAM) Memory IC 32Mbit Parallel 45 ns 48-FBGA (10x10)

MRAM (Magnetoresistive RAM) Memory IC 32Mbit Parallel 45 ns 48-FBGA (10x10)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - M3032316045NX0IBCY - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory
M3032316045NX0IBCY
Integrated Circuits (ICs) - Memory M3032316045NX0IBCY
32MB MRAM PARALLEL INTERFACE, 45

32MB MRAM PARALLEL INTERFACE, 45

Supplier's Site
32MB MRAM PARALLEL INTERFACE, 45

32MB MRAM PARALLEL INTERFACE, 45

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) Quarktwin Technology Ltd. Acme Chip Technology Co., Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number M3032316045NX0IBCY M3032316045NX0IBCY M3032316045NX0IBCY M3032316045NX0IBCY
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category MRAM; MRAM (Magnetoresistive RAM) RAM Non-Volatile RAM
Access Time 45 ns 45 ns 45 ns 45 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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Specs
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Bits per Word 8 bits
Pins 8
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