Renesas Electronics Corporation Memory M3016316045NX0ITBY

Description
MRAM (Magnetoresistive RAM) Memory IC 16Mbit Parallel 45 ns 54-TSOP
  • Memory - M3016316045NX0ITBY - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Description
MRAM (Magnetoresistive RAM) Memory IC 16Mbit Parallel 45 ns 54-TSOP

Suppliers

Company
Product
Description
Supplier Links
Memory - M3016316045NX0ITBY - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
M3016316045NX0ITBY
Memory M3016316045NX0ITBY
MRAM (Magnetoresistive RAM) Memory IC 16Mbit Parallel 45 ns 54-TSOP

MRAM (Magnetoresistive RAM) Memory IC 16Mbit Parallel 45 ns 54-TSOP

Buy Now

Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number M3016316045NX0ITBY
Product Name Memory
Memory Category RAM
Access Time 45 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - Controllers - DP8421ATVX-25 - Lingto Electronic Limited
Texas Instruments
Memory - Controllers
DP8421ATVX-25
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type 68-LCC (J-Lead)
View Details
2 suppliers
Memory - MYXxxSMSxxxxPxxxxx-xx/x - Micross Components, Inc.
Micross Components, Inc.
Memory
MYXxxSMSxxxxPxxxxx-xx/x
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882878 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882878
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Memory - 16-3745-01 - Lingto Electronic Limited
Infineon Technologies AG
Memory
16-3745-01
View Details
2 suppliers