Renesas Electronics Corporation Memory M3016316045NX0ITBY

Description
MRAM (Magnetoresistive RAM) Memory IC 16Mbit Parallel 45 ns 54-TSOP
  • Memory - M3016316045NX0ITBY - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Description
MRAM (Magnetoresistive RAM) Memory IC 16Mbit Parallel 45 ns 54-TSOP

Suppliers

Company
Product
Description
Supplier Links
Memory - M3016316045NX0ITBY - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
M3016316045NX0ITBY
Memory M3016316045NX0ITBY
MRAM (Magnetoresistive RAM) Memory IC 16Mbit Parallel 45 ns 54-TSOP

MRAM (Magnetoresistive RAM) Memory IC 16Mbit Parallel 45 ns 54-TSOP

Buy Now

Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number M3016316045NX0ITBY
Product Name Memory
Memory Category RAM
Access Time 45 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 6116SA45DB - Lingto Electronic Limited
Rochester Electronics
Memory
6116SA45DB
Specs
Memory Category SRAM; SRAM Chip
Access Time 45 ns
Density 16 kbits
View Details
Infineon Technologies AG
Integrated Circuits (ICs) - Memory - Memory
40060431
View Details
5V Memory IC and Storage Component - 774-MT5C1005C-25L-883C - ERSAELECTRONICS PTE. LTD.
Micross Components, Inc.
5V Memory IC and Storage Component
MT5C1005C-25L-883C
Specs
Memory Category SRAM Chip
Operating Temperature -55 C (-67 F)
Density 1000 kbits
View Details
2 suppliers
SN54ACT3632 512 x 36 x 2 Synchronous Bidirectional FIFO Memory - SN54ACT3632HFP - Texas Instruments
Texas Instruments
SN54ACT3632 512 x 36 x 2 Synchronous Bidirectional FIFO Memory
SN54ACT3632HFP
Specs
Memory Category FIFO
Package Type CFP
View Details
4 suppliers