Renesas Electronics Corporation Memory M3016316035NX0ITBR

Description
MRAM (Magnetoresistive RAM) Memory IC 16Mbit Parallel 35 ns 54-TSOP
Description
MRAM (Magnetoresistive RAM) Memory IC 16Mbit Parallel 35 ns 54-TSOP

Suppliers

Company
Product
Description
Supplier Links
Memory - M3016316035NX0ITBR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
MRAM (Magnetoresistive RAM) Memory IC 16Mbit Parallel 35 ns 54-TSOP

MRAM (Magnetoresistive RAM) Memory IC 16Mbit Parallel 35 ns 54-TSOP

Buy Now

Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number M3016316035NX0ITBR
Product Name Memory
Memory Category RAM
Access Time 35 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 16-3459-02-T - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - 71024S20TYI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 1000 kbits
View Details
Memory - 93Z451LMQB - Quarktwin Technology Ltd.
Texas Instruments
Specs
Memory Category PROM; PROM
Access Time 55 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
2 suppliers
Flash Memory - 1712234P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 64000 kbits
Package Type SOIC; SOIC
View Details