Renesas Electronics Corporation Memory M3016316035NX0ITBR

Description
MRAM (Magnetoresistive RAM) Memory IC 16Mbit Parallel 35 ns 54-TSOP
  • Memory - M3016316035NX0ITBR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Description
MRAM (Magnetoresistive RAM) Memory IC 16Mbit Parallel 35 ns 54-TSOP

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Memory - M3016316035NX0ITBR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
M3016316035NX0ITBR
Memory M3016316035NX0ITBR
MRAM (Magnetoresistive RAM) Memory IC 16Mbit Parallel 35 ns 54-TSOP

MRAM (Magnetoresistive RAM) Memory IC 16Mbit Parallel 35 ns 54-TSOP

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Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number M3016316035NX0ITBR
Product Name Memory
Memory Category RAM
Access Time 35 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
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