Renesas Electronics Corporation ISL89165FBEBZ

Description
AND Gate Based MOSFET Driver, 6A, PDSO8
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Description
AND Gate Based MOSFET Driver, 6A, PDSO8
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Datasheet
Datasheet Summary
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The ISL89165FBEBZ is a dual-channel, 6A peak current MOSFET driver with enable inputs, packaged in an 8-lead EPSOIC with an exposed thermal pad. It supports 5.0V CMOS logic inputs, features non-inverting and inverting inputs for channels A and B respectively, and operates with a supply voltage range of 4.5V to 16V. The device includes undervoltage lockout, 20ns typical rise and fall times with a 10nF load, and a thermal resistance of 3°C/W junction-to-case. The exposed pad must be connected to PCB ground for proper thermal and electrical performance. It meets RoHS compliance and is rated for operation from -40°C to +125°C junction temperature.

Datasheet Summary
Powered by GS/AI

The ISL89165FBEBZ is a dual-channel, 6A peak current MOSFET driver with enable inputs, packaged in an 8-lead EPSOIC with an exposed thermal pad. It supports 5.0V CMOS logic inputs, features non-inverting and inverting inputs for channels A and B respectively, and operates with a supply voltage range of 4.5V to 16V. The device includes undervoltage lockout, 20ns typical rise and fall times with a 10nF load, and a thermal resistance of 3°C/W junction-to-case. The exposed pad must be connected to PCB ground for proper thermal and electrical performance. It meets RoHS compliance and is rated for operation from -40°C to +125°C junction temperature.

Suppliers

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Product
Description
Supplier Links
 - ISL89165FBEBZ - Rochester Electronics
Newburyport, MA, United States
AND Gate Based MOSFET Driver, 6A, PDSO8

AND Gate Based MOSFET Driver, 6A, PDSO8

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number ISL89165FBEBZ
Package Type SOICN-EP
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