Renesas Electronics Corporation Memory IDT71V65802S100PF8

Description
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 100 MHz 5 ns 100-TQFP (14x14)
Datasheet
Description
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 100 MHz 5 ns 100-TQFP (14x14)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT71V65802S100PF8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 100 MHz 5 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 100 MHz 5 ns 100-TQFP (14x14)

Buy Now Datasheet
IC SRAM 9MBIT PARALLEL 100TQFP

IC SRAM 9MBIT PARALLEL 100TQFP

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number IDT71V65802S100PF8 IDT71V65802S100PF8
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 5 ns 5 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MT4C4001J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 24LC04-I/SL - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3.50E6 ns
Density 4 kbits
View Details
Flash Memory - 1882745P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 32000 kbits
Package Type USON
View Details
Memory - A2C00064358 A - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers