Renesas Electronics Corporation Memory IDT71V416VS10PHI

Description
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 44-TSOP II
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Description
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 44-TSOP II
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT71V416VS10PHI-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 44-TSOP II

SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 44-TSOP II

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IDT71V416VS10PHI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IDT71V416VS10PHI
Integrated Circuits (ICs) - Memory IDT71V416VS10PHI
IC SRAM 4MBIT PARALLEL 44TSOP II

IC SRAM 4MBIT PARALLEL 44TSOP II

Supplier's Site
IC SRAM 4MBIT PARALLEL 44TSOP II

IC SRAM 4MBIT PARALLEL 44TSOP II

Supplier's Site Datasheet
Memory - IDT71V416VS10PHI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IDT71V416VS10PHI-ND IDT71V416VS10PHI IDT71V416VS10PHI IDT71V416VS10PHI
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4000 kbits 4000 kbits 4000 kbits 4000 kbits
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