Renesas Electronics Corporation Memory IDT71V416VL12BEI8

Description
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 12ns 48-CABGA (9x9)
Request a Quote
Description
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 12ns 48-CABGA (9x9)
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IDT71V416VL12BEI8 is a 4Mbit (256K x 16) high-speed CMOS Static RAM designed for both commercial and industrial applications. It operates with a single 3.3V power supply and features equal access and cycle times of 10ns, 12ns, and 15ns, making it suitable for high-speed memory requirements. The device includes a chip select and output enable pin, along with bidirectional LVTTL-compatible data inputs and outputs. It is available in multiple package options, including a 44-pin, 400 mil plastic SOJ, a 44-pin, 400 mil TSOP Type II, and a 48-ball grid array measuring 9mm x 9mm. The IDT71V416VL12BEI8 utilizes fully static asynchronous circuitry, eliminating the need for clocks or refresh cycles, which simplifies integration into various systems. Its low power consumption during chip deselect enhances its efficiency for battery-operated devices.

Datasheet Summary
Powered by GS/AI

The IDT71V416VL12BEI8 is a 4Mbit (256K x 16) high-speed CMOS Static RAM designed for both commercial and industrial applications. It operates with a single 3.3V power supply and features equal access and cycle times of 10ns, 12ns, and 15ns, making it suitable for high-speed memory requirements. The device includes a chip select and output enable pin, along with bidirectional LVTTL-compatible data inputs and outputs. It is available in multiple package options, including a 44-pin, 400 mil plastic SOJ, a 44-pin, 400 mil TSOP Type II, and a 48-ball grid array measuring 9mm x 9mm. The IDT71V416VL12BEI8 utilizes fully static asynchronous circuitry, eliminating the need for clocks or refresh cycles, which simplifies integration into various systems. Its low power consumption during chip deselect enhances its efficiency for battery-operated devices.

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT71V416VL12BEI8-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 12ns 48-CABGA (9x9)

SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 12ns 48-CABGA (9x9)

Buy Now Datasheet
IC SRAM 4MBIT PARALLEL 48CABGA

IC SRAM 4MBIT PARALLEL 48CABGA

Supplier's Site Datasheet
Memory - IDT71V416VL12BEI8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 48-CABGA (9x9)

SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 48-CABGA (9x9)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IDT71V416VL12BEI8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IDT71V416VL12BEI8
Integrated Circuits (ICs) - Memory IDT71V416VL12BEI8
IC SRAM 4MBIT PARALLEL 48CABGA

IC SRAM 4MBIT PARALLEL 48CABGA

Supplier's Site

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IDT71V416VL12BEI8-ND IDT71V416VL12BEI8 IDT71V416VL12BEI8 IDT71V416VL12BEI8
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4000 kbits 4000 kbits 4000 kbits 4000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory IC and Storage Component - 774-CY14B064I-SFXIT - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category NVSRAM; Non-Volatile; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F)
Address Bus Width 8 bits
View Details
5 suppliers
Memory - 7164L85TDB - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 85 ns
Density 64 kbits
View Details
Flash Memory - 1882769P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 2048000 kbits
Package Type SOIC; SOIC
View Details