Renesas Electronics Corporation Memory IDT71V416L12YI8

Description
IC SRAM 4MBIT PARALLEL 44SOJ
Datasheet
Description
IC SRAM 4MBIT PARALLEL 44SOJ
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC SRAM 4MBIT PARALLEL 44SOJ

IC SRAM 4MBIT PARALLEL 44SOJ

Supplier's Site Datasheet
Memory - IDT71V416L12YI8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-SOJ

SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-SOJ

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number IDT71V416L12YI8 IDT71V416L12YI8
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 12 ns 12 ns
Density 4000 kbits 4000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882864P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 1024000 kbits
Package Type WSON
View Details
 - 93425DMQB30 - Rochester Electronics
Specs
Memory Category SRAM Chip
Logic Family TTL
Package Type DIP; CDIP16
View Details
4 suppliers
Memory - AS28F128J3A - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 115 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 71V124SA15YGI8 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Density 1000 kbits
View Details