Renesas Electronics Corporation Memory IDT71V3577SA80BQI

The IDT71V3577SA80BQI is a 3.3V synchronous SRAM organized as 128K x 36 bits, designed for high-speed applications. It supports fast access times with options for 7.5ns at 117MHz, 8.0ns at 100MHz, and 8.5ns at 87MHz, making it suitable for performance-critical systems. The device features a flow-through architecture, allowing for immediate data output without internal registers, which enhances data throughput. This SRAM includes a burst mode capability, enabling it to provide four cycles of data for a single address input, controlled by an internal burst address counter. The LBO input allows selection between interleaved and linear burst modes, providing flexibility in data handling. It also features a self-timed write cycle with global and byte write controls, enhancing ease of integration into various designs. The IDT71V3577SA80BQI is available in multiple package options, including a 100-pin TQFP, a 119-ball BGA, and a 165 fine pitch BGA, catering to different space and layout requirements. It operates with a 3.3V core and I/O power supply, and includes a power-down feature controlled by the ZZ input for low-power applications. This product is suitable for both commercial and industrial temperature ranges, making it versatile for various engineering projects.