IC SRAM 256KBIT PARALLEL 28SOJ Product overview: IDT71V256SA10YG from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IDT71V256SA10YG can be used for catalog matching and distributor lookup.
SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 10ns 28-SOJ
IC SRAM 256KBIT PARALLEL 28SOJ
SRAM - Asynchronous Memory IC 256Kbit Parallel 10 ns 28-SOJ
IC SRAM 256KBIT PARALLEL 28SOJ
| ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IDT71V256SA10YG | 800-1464-5-ND | IDT71V256SA10YG | IDT71V256SA10YG | IDT71V256SA10YG |
| Product Name | Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | Volatile; SRAM Chip | SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip |
| Access Time | 10 ns | 10 ns | 10 ns | 10 ns | |
| Cycle Time | 10 ns | ||||
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) |
